Industrial Tech

Mitsubishi Electric Unveils High-Isolation HVIGBT Modules

Mitsubishi Electric has announced the launch of two new high‑voltage insulated‑gate bipolar transistor (HVIGBT) modules in its "XB Series" that feature higher insulation voltage and improved reliability for industrial equipment and rail‑car inverter systems. These new modules-one standard-isolation (6.0 kVrms) and one high-isolation (10.2 kVrms)-complement the 4.5 kV rating of the XB Series to position them for use in demanding environments that require both high capacity and robust insulation. What's New: Technical Advances in HVIGBT Design The new XB‑Series modules feature Mitsubishi's unique relaxed-field-of-cathode (RFC) diode and carrier-stored trench-gate bipolar transistor (CSTBT) structures, facilitating compact chip termination (downsizing by approximately 30%) while increasing moisture resistance to about 20× compared to former models. Also Read: Micron’s $9.6B Investment to Boost Japan’s Chip Industry Switching loss is reduced by approximately 5–15% compared to earlier modules,…