Kioxia and Sandisk Launch Kitakami Fab 2 for AI Market

Kioxia Corporation and Sandisk Corporation have begun production at Fab2 (K2). This advanced semiconductor facility is located in Kitakami, Iwate Prefecture, Japan. Fab2 can make eighth-generation, 218-layer 3D flash memory. It uses the company’s CMOS Direct Bonding (CBA) technology. Also, it’s built to support future advanced 3D flash memory nodes. Mass production should start in early 2026. Output will rise due to demand from AI and high-performance computing.

The facility uses earthquake-resistant design, energy-efficient machines, and AI-driven methods to boost efficiency. Compact design boosts cleanroom space and pushes semiconductor fabrication ahead. This project, backed by the Japanese government, aims to enhance global competitiveness in high-density storage solutions.

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株式会社キオクシア そして Sandisk Corporation have collaborated for over 20 years. They have shared their skills to develop 3D flash memory. Fab2’s launch shows their drive for innovation. They meet the rising demand for large storage in AI and data-heavy markets.