ON Semiconductor kind of introduced GaNEXUS, this new gallium nitride GaN power portfolio, made to bump efficiency, power density, and also thermal performance in AI data centers, industrial automation, robotics, and energy infrastructure. The company says it has started shipping samples of GaNEXUS FETs along with 650V GaNEXUS Smart devices in the US, and these cover a pretty wide voltage spread from 40V to 650V.
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This kind of launch sort of tracks the growing need for more efficient power architectures, especially since AI workloads are ramping, and electrification plus automation keeps expanding too. In comparison with the more traditional silicon based solutions, GaN technology can switch faster, create lower power losses, and allow smaller overall system designs. When it’s combined with ON Semiconductor’s Treo platform, GaNEXUS tries to make power system development easier, while also helping customers push energy efficiency up, cool requirements down, and keep operating costs lower across high performance uses.

