Mitsubishi Electric Corporation and GE Vernova, Inc. have agreed to strengthen cooperation in the field of power semiconductors for high-voltage direct current transmission systems. This cooperation is one of the inter-company collaborations within the “Focus Group for Strengthening Japan-U.S. Energy Security and Supply Chains” established by the Ministry of Economy, Trade and Industry and GE Vernova. Today, the two companies signed a memorandum of understanding (MOU) to this end.
In recent years, the introduction of power generation systems using renewable energies such as wind and solar power has expanded worldwide in an effort to realize a decarbonized society. As a result, there is growing demand for HVDC systems, which can transmit large amounts of generated electricity over long distances in a stable and efficient manner compared to AC transmission systems.
Among these, the VSC type HVDC system has the function of stabilizing the power grid, and because it is capable of stable and efficient long-distance large-capacity power transmission even when combined with a power generation system that uses renewable energy, which is an unstable power source, the market is expanding rapidly worldwide. Although we have the global top share in power semiconductors for VSC-type HVDC systems, we aim to further expand our business in the field of power semiconductors for HVDC systems by promoting advanced development of IGBT power semiconductors with high reliability, high voltage resistance, and large current, and by increasing our production capacity.
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With this MOU, GE will provide a stable and continuous supply of IGBT power semiconductors for GE Bernova‘s VSC-type HVDC systems. In addition, the two companies will combine their knowledge and strengths to strengthen their technical and strategic cooperation, aiming to support the evolution of the power grid to meet growing electricity demand.
SOURCE: PRTimes
