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Lam Research Corp., a top player in semiconductor equipment, has signed a non-exclusive cross-licensing and collaboration deal with JSR Corporation and its subsidiary, Inpria Corporation. Inpria specializes in metal oxide photoresist solutions. The agreement seeks to speed up progress in semiconductor manufacturing. It highlights new patterning technologies, such as dry resist for EUV lithography. It also aims to promote the creation of materials for atomic layer etching and deposition.
Combining strengths in materials and equipment for leading-edge patterning
This partnership combines JSR Group’s skills in innovative semiconductor materials, like advanced metal oxide solutions, with Lam’s top-notch abilities in deposition, etch, and EUV patterning. Lam’s Aether® system is a game-changing dry resist platform. It lowers costs and makes it easier to create complex chip patterns for AI and high-performance computing.
Accelerating the industry’s move toward next-gen EUV patterning
Lam and JSR/Inpria will work together. They will combine JSR/Inpria’s advanced patterning resists and films with Lam’s etch and dry resist deposition technologies. The companies will work together on innovation in key areas to help chipmakers prepare for the AI era, including:
- R&D of advanced metal oxide resists.
- High numerical aperture (NA) EUV patterning is key for future advanced nodes.
- Novel films and materials for next-generation patterning.
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JSR recently acquired Yamanaka Hutech Corporation. They will explore new precursor materials and processes together. This improves atomic layer deposition and etch solutions.
Lam and JSR/Inpria are teaming up to speed up the semiconductor industry’s shift to next-gen patterning. This partnership will drive important innovations. These will boost chip scaling and performance for AI, HPC, and more.
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