{"id":16927,"date":"2025-07-02T10:23:18","date_gmt":"2025-07-02T10:23:18","guid":{"rendered":"https:\/\/itbusinesstoday.com\/?p=16927"},"modified":"2025-07-02T10:23:18","modified_gmt":"2025-07-02T10:23:18","slug":"renesas-unveils-gan-fets-for-ai-industrial-and-ev-power","status":"publish","type":"post","link":"https:\/\/itbusinesstoday.com\/ja\/tech\/cloud\/renesas-unveils-gan-fets-for-ai-industrial-and-ev-power\/","title":{"rendered":"\u30eb\u30cd\u30b5\u30b9\u3001AI\u30fb\u7523\u696d\u30fbEV\u5411\u3051GaN FET\u3092\u767a\u8868"},"content":{"rendered":"

\u30eb\u30cd\u30b5\u30b9 \u30a8\u30ec\u30af\u30c8\u30ed\u30cb\u30af\u30b9\u682a\u5f0f\u4f1a\u793e\uff08\u4ee3\u8868\u53d6\u7de0\u5f79\u793e\u9577\u517cCEO\uff1a\u8d64\u5c3e \u6cf0\u3001\u4ee5\u4e0b\u30eb\u30cd\u30b5\u30b9\uff09\u306f\u3001\u3053\u306e\u305f\u3073\u3001AI\u30c7\u30fc\u30bf\u30bb\u30f3\u30bf\u30fc\u304a\u3088\u3073\u30b5\u30fc\u30d0\u96fb\u6e90\u30b7\u30b9\u30c6\u30e0\uff08\u65b0800V HVDC\u30a2\u30fc\u30ad\u30c6\u30af\u30c1\u30e3\u3001E-\u30e2\u30d3\u30ea\u30c6\u30a3\u5145\u96fb\u3001UPS\u30d0\u30c3\u30c6\u30ea\u30d0\u30c3\u30af\u30a2\u30c3\u30d7\u30c7\u30d0\u30a4\u30b9\u3001\u30d0\u30c3\u30c6\u30ea\u30a8\u30cd\u30eb\u30ae\u30fc\u8caf\u8535\u3001\u30bd\u30fc\u30e9\u30fc\u30a4\u30f3\u30d0\u30fc\u30bf\u3092\u542b\u3080\uff09\u5411\u3051\u306b\u3001\u9ad8\u8010\u5727650V GaN FET 3\u88fd\u54c1\u3092\u767a\u8868\u3057\u307e\u3057\u305f\u3002\u30de\u30eb\u30c1\u30ad\u30ed\u30ef\u30c3\u30c8\u30af\u30e9\u30b9\u306e\u30a2\u30d7\u30ea\u30b1\u30fc\u30b7\u30e7\u30f3\u5411\u3051\u306b\u8a2d\u8a08\u3055\u308c\u305f\u3053\u308c\u3089\u306e\u7b2c4\u4e16\u4ee3\u30d7\u30e9\u30b9\uff08Gen IV Plus\uff09\u30c7\u30d0\u30a4\u30b9\u306f\u3001\u9ad8\u52b9\u7387GaN\u6280\u8853\u3068\u30b7\u30ea\u30b3\u30f3\u4e92\u63db\u306e\u30b2\u30fc\u30c8\u30c9\u30e9\u30a4\u30d6\u5165\u529b\u3092\u7d44\u307f\u5408\u308f\u305b\u3001\u30b7\u30ea\u30b3\u30f3FET\u306e\u52d5\u4f5c\u306e\u30b7\u30f3\u30d7\u30eb\u3055\u3092\u7dad\u6301\u3057\u306a\u304c\u3089\u3001\u30b9\u30a4\u30c3\u30c1\u30f3\u30b0\u96fb\u529b\u640d\u5931\u3092\u5927\u5e45\u306b\u524a\u6e1b\u3057\u307e\u3059\u3002TOLT\u3001TO-247\u3001\u304a\u3088\u3073TOLL\u30d1\u30c3\u30b1\u30fc\u30b8\u30fb\u30aa\u30d7\u30b7\u30e7\u30f3\u3067\u63d0\u4f9b\u3055\u308c\u308b\u3053\u306e\u30c7\u30d0\u30a4\u30b9\u306b\u3088\u308a\u3001\u30a8\u30f3\u30b8\u30cb\u30a2\u306f\u7279\u5b9a\u306e\u30d1\u30ef\u30fc\u30fb\u30a2\u30fc\u30ad\u30c6\u30af\u30c1\u30e3\u5411\u3051\u306b\u71b1\u7ba1\u7406\u3068\u57fa\u677f\u8a2d\u8a08\u3092\u67d4\u8edf\u306b\u30ab\u30b9\u30bf\u30de\u30a4\u30ba\u3067\u304d\u307e\u3059\u3002<\/p>

The new TP65H030G4PRS, TP65H030G4PWS and TP65H030G4PQS devices leverage the robust SuperGaN® platform, a field-proven depletion mode (d-mode) normally-off architecture pioneered by Transphorm, which was acquired by Renesas in June 2024. Based on low-loss d-mode technology, the devices offer superior efficiency over silicon, silicon carbide (SiC), and other GaN offerings. Moreover, they minimize power loss with lower gate charge, output capacitance, crossover loss, and dynamic resistance impact, with a higher 4V threshold voltage, which is not achievable with today’s enhancement mode (e-mode) GaN devices.<\/p>

Built on a die that is 14 percent smaller than the previous Gen IV platform, the new Gen IV Plus products achieve a lower RDS(on) of 30 milliohms (mΩ), reducing on-resistance by 14 percent and delivering a 20 percent improvement in on-resistance output-capacitance-product figure of merit (FOM). The smaller die size reduces system costs and lowers output capacitance, which results in higher efficiency and power density. These advantages make the Gen IV Plus devices ideal for cost-conscious, thermally demanding applications where high performance, efficiency and small footprint are critical. They are fully compatible with existing designs for easy upgrades, while preserving existing engineering investments.<\/p>

\u3053\u3061\u3089\u3082\u304a\u8aad\u307f\u304f\u3060\u3055\u3044\uff1a \u30bb\u30fc\u30eb\u30b9\u30d5\u30a9\u30fc\u30b9\u3001\u65e5\u672c\u5e02\u5834\u5411\u3051Revenue Cloud\u3092\u767a\u8868<\/a><\/h4>

\u30b3\u30f3\u30d1\u30af\u30c8\u306aTOLT\u3001TO-247\u3001\u304a\u3088\u3073TOLL\u30d1\u30c3\u30b1\u30fc\u30b8\u3067\u63d0\u4f9b\u3055\u308c\u308b\u3053\u308c\u3089\u306e\u30d1\u30c3\u30b1\u30fc\u30b8\u306f\u30011kW\u304b\u308910kW\u3001\u3055\u3089\u306b\u306f\u4e26\u5217\u5316\u306b\u3088\u308a\u305d\u308c\u4ee5\u4e0a\u306e\u30d1\u30ef\u30fc\u30b7\u30b9\u30c6\u30e0\u306e\u71b1\u6027\u80fd\u3068\u30ec\u30a4\u30a2\u30a6\u30c8\u306e\u6700\u9069\u5316\u306b\u5bfe\u5fdc\u3059\u308b\u3001\u6700\u3082\u5e45\u5e83\u3044\u30d1\u30c3\u30b1\u30fc\u30b8\u30aa\u30d7\u30b7\u30e7\u30f3\u306e1\u3064\u3067\u3059\u3002\u65b0\u3057\u3044\u8868\u9762\u5b9f\u88c5\u30d1\u30c3\u30b1\u30fc\u30b8\u306b\u306f\u3001\u30b1\u30fc\u30b9\u6e29\u5ea6\u3092\u4e0b\u3052\u308b\u305f\u3081\u306e\u30dc\u30c8\u30e0\u30b5\u30a4\u30c9\uff08TOLL\uff09\u3068\u30c8\u30c3\u30d7\u30b5\u30a4\u30c9\uff08TOLT\uff09\u306e\u71b1\u4f1d\u5c0e\u7d4c\u8def\u304c\u3042\u308a\u3001\u9ad8\u3044\u4f1d\u5c0e\u96fb\u6d41\u304c\u5fc5\u8981\u306a\u5834\u5408\u306b\u30c7\u30d0\u30a4\u30b9\u306e\u4e26\u5217\u5316\u304c\u5bb9\u6613\u306b\u306a\u308a\u307e\u3059\u3002\u3055\u3089\u306b\u3001\u4e00\u822c\u7684\u306b\u4f7f\u7528\u3055\u308c\u3066\u3044\u308bTO-247\u30d1\u30c3\u30b1\u30fc\u30b8\u306f\u3001\u9ad8\u51fa\u529b\u3092\u9054\u6210\u3059\u308b\u305f\u3081\u306e\u9ad8\u3044\u71b1\u80fd\u529b\u3092\u304a\u5ba2\u69d8\u306b\u63d0\u4f9b\u3057\u307e\u3059\u3002<\/p>

“The rollout of Gen IV Plus GaN devices marks the first major new product milestone since Renesas’ acquisition of Transphorm last year,” said Primit Parikh, Vice President of the GaN Business Division at Renesas. “Future versions will combine the field-proven SuperGaN technology with our drivers and controllers to deliver complete power solutions. Whether used as standalone FETs or integrated into complete system solution designs with Renesas controllers or drivers, these devices will provide a clear path to designing products with higher power density, reduced footprint and better efficiency at a lower total system cost.”<\/p>

\u4fe1\u983c\u6027\u3068\u5bb9\u6613\u306a\u7d71\u5408\u3092\u5b9f\u73fe\u3059\u308b\u72ec\u81ea\u306ed\u30e2\u30fc\u30c9\u30ce\u30fc\u30de\u30eb\u30aa\u30d5\u8a2d\u8a08<\/h4>

Like previous d-mode GaN products, the new Renesas devices use an integrated low-voltage silicon MOSFET – a unique configuration that achieves seamless normally-off operation while fully capturing the low loss, high efficiency switching benefits of the high-voltage GaN. As they use silicon FETs for the input stage, the SuperGaN FETs are easy to drive with standard off-the-shelf gate drivers rather than specialized drivers that are normally required for e-mode GaN. This compatibility simplifies design and lowers the barrier to GaN adaptation for system developers.<\/p>

GaN\u30d9\u30fc\u30b9\u306e\u30b9\u30a4\u30c3\u30c1\u30f3\u30b0\u30fb\u30c7\u30d0\u30a4\u30b9\u306f\u3001\u96fb\u6c17\u81ea\u52d5\u8eca\uff08EV\uff09\u3001\u30a4\u30f3\u30d0\u30fc\u30bf\u3001AI\u30c7\u30fc\u30bf\u30bb\u30f3\u30bf\u30fc\u30fb\u30b5\u30fc\u30d0\u3001\u518d\u751f\u53ef\u80fd\u30a8\u30cd\u30eb\u30ae\u30fc\u3001\u7523\u696d\u7528\u96fb\u529b\u5909\u63db\u306a\u3069\u306e\u9700\u8981\u306b\u5f8c\u62bc\u3057\u3055\u308c\u3001\u6b21\u4e16\u4ee3\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u306e\u30ad\u30fc\u30c6\u30af\u30ce\u30ed\u30b8\u30fc\u3068\u3057\u3066\u6025\u901f\u306b\u6210\u9577\u3057\u3066\u3044\u307e\u3059\u3002SiC\u3084\u30b7\u30ea\u30b3\u30f3\u30d9\u30fc\u30b9\u306e\u534a\u5c0e\u4f53\u30b9\u30a4\u30c3\u30c1\u30f3\u30b0\u30fb\u30c7\u30d0\u30a4\u30b9\u3068\u6bd4\u8f03\u3057\u3066\u3001\u512a\u308c\u305f\u52b9\u7387\u3001\u9ad8\u3044\u30b9\u30a4\u30c3\u30c1\u30f3\u30b0\u5468\u6ce2\u6570\u3001\u5c0f\u3055\u306a\u30d5\u30c3\u30c8\u30d7\u30ea\u30f3\u30c8\u3092\u5b9f\u73fe\u3057\u307e\u3059\u3002<\/p>

Renesas<\/a> \u30eb\u30cd\u30b5\u30b9\u306f\u3001GaN\u5e02\u5834\u306b\u304a\u3051\u308b\u5305\u62ec\u7684\u306a\u30bd\u30ea\u30e5\u30fc\u30b7\u30e7\u30f3\u3067\u72ec\u81ea\u306e\u5730\u4f4d\u3092\u78ba\u7acb\u3057\u3066\u304a\u308a\u3001\u3053\u306e\u5206\u91ce\u3067\u306e\u6210\u529f\u304c\u4e3b\u306b\u4f4e\u96fb\u529b\u30c7\u30d0\u30a4\u30b9\u306b\u9650\u3089\u308c\u3066\u3044\u308b\u591a\u304f\u306e\u30d7\u30ed\u30d0\u30a4\u30c0\u3068\u306f\u7570\u306a\u308a\u3001\u9ad8\u96fb\u529b\u3068\u4f4e\u96fb\u529b\u306e\u4e21\u65b9\u306eGaN FET\u3092\u63d0\u4f9b\u3057\u3066\u3044\u307e\u3059\u3002\u3053\u306e\u591a\u69d8\u306a\u30dd\u30fc\u30c8\u30d5\u30a9\u30ea\u30aa\u306b\u3088\u308a\u3001\u30eb\u30cd\u30b5\u30b9\u306f\u3088\u308a\u5e45\u5e83\u3044\u30a2\u30d7\u30ea\u30b1\u30fc\u30b7\u30e7\u30f3\u3084\u9867\u5ba2\u30cb\u30fc\u30ba\u306b\u5bfe\u5fdc\u3059\u308b\u3053\u3068\u304c\u3067\u304d\u307e\u3059\u3002\u30eb\u30cd\u30b5\u30b9\u306f\u73fe\u5728\u307e\u3067\u306b\u3001\u9ad8\u51fa\u529b\u304a\u3088\u3073\u4f4e\u51fa\u529b\u30a2\u30d7\u30ea\u30b1\u30fc\u30b7\u30e7\u30f3\u5411\u3051\u306b2,000\u4e07\u500b\u4ee5\u4e0a\u306eGaN\u30c7\u30d0\u30a4\u30b9\u3092\u51fa\u8377\u3057\u3066\u304a\u308a\u3001\u3053\u308c\u306f3,000\u5104\u6642\u9593\u3092\u8d85\u3048\u308b\u30d5\u30a3\u30fc\u30eb\u30c9\u3067\u306e\u4f7f\u7528\u306b\u76f8\u5f53\u3057\u307e\u3059\u3002<\/p>

\u30bd\u30fc\u30b9 BusinessWire<\/a><\/strong><\/p>","protected":false},"excerpt":{"rendered":"

Renesas Electronics Corporation, a premier supplier of advanced semiconductor solutions, introduced three new high-voltage 650V GaN FETs for AI data centers and server power supply systems including the new 800V HVDC architecture, E-mobility charging, UPS battery backup devices, battery energy storage and solar inverters. Designed for multi-kilowatt-class applications, these 4th-generation plus (Gen IV Plus) devices combine high-efficiency GaN technology with a silicon-compatible gate drive input, significantly reducing switching power loss while retaining the operating simplicity of silicon FETs. Offered in TOLT, TO-247 and TOLL package options, the devices give engineers the flexibility to customize their thermal management and board design for specific power architectures.The new TP65H030G4PRS, TP65H030G4PWS and TP65H030G4PQS devices […]<\/p>\n","protected":false},"author":4,"featured_media":16979,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_bbp_topic_count":0,"_bbp_reply_count":0,"_bbp_total_topic_count":0,"_bbp_total_reply_count":0,"_bbp_voice_count":0,"_bbp_anonymous_reply_count":0,"_bbp_topic_count_hidden":0,"_bbp_reply_count_hidden":0,"_bbp_forum_subforum_count":0,"wprm-recipe-roundup-name":"","wprm-recipe-roundup-description":"","postBodyCss":"","postBodyMargin":[],"postBodyPadding":[],"postBodyBackground":{"backgroundType":"classic","gradient":""},"footnotes":""},"categories":[208,183,211,237,206,85],"tags":[218,384,1307,962,5819,5820],"ppma_author":[205],"class_list":["post-16927","post","type-post","status-publish","format-standard","has-post-thumbnail","category-apac","category-cloud","category-japan","category-news","category-regional","category-tech","tag-ai","tag-cloud","tag-data-centers","tag-data-management","tag-gan-fets","tag-renesas-electronics-corporation"],"yoast_head":"\nRenesas Expands GaN FETs for AI, Industrial, Charging Use<\/title>\n<meta name=\"description\" content=\"Renesas launches 650V GaN FETs for AI data centers and energy systems, delivering high efficiency and flexible thermal management.\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/itbusinesstoday.com\/ja\/tech\/renesas-unveils-gan-fets-for-ai-industrial-and-ev-power\/\" \/>\n<meta property=\"og:locale\" content=\"ja_JP\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Renesas Expands GaN FETs for AI, Industrial, Charging Use\" \/>\n<meta property=\"og:description\" content=\"Renesas launches 650V GaN FETs for AI data centers and energy systems, delivering high efficiency and flexible thermal management.\" \/>\n<meta property=\"og:url\" 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